INVESTIGATION OF ELECTRICAL AND STRAIN-RESISTIVE PROPERTIES OF FILM-BASED SENSITIVE ELEMENTS FROM BISMUTH-ANTIMONY TELLURIDES
Keywords:
film sensing elements, bismuth and antimony tellurides, strain gauges, strain gauge, thermal deposition, electrical conductivity, resistivity, gauge factor, substrate temperature, evaporation temperature, deposition rateAbstract
This study is devoted to the investigation of the electrophysical and strain-sensitive properties of polycrystalline film-sensitive elements based on bismuth-antimony tellurides. The work examines the influence of deposition parameters, particularly the deposition rate, on the resistivity and strain-sensitivity coefficient of films grown on polyimide substrates.
The results show that increasing the deposition rate from 10 nm/s to 40 nm/s leads to a decrease in the resistivity of the films. Meanwhile, the strain-sensitivity coefficient demonstrates non-linear behavior, reaching a maximum at a deposition rate of 20 nm/s. The amplitude of this maximum is determined by the evaporation temperature, indicating the critical role of thermal and deposition conditions in shaping the film's properties.
The findings highlight the potential of bismuth-antimony telluride films as sensitive elements for thermoelectric and strain-sensitive applications. This study provides a foundation for optimizing the fabrication process to achieve reproducible and high-performance materials for use in energy-efficient technologies, strain sensors, and flexible electronic devices.
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